型号:

BSV52LT1G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:TRANS NPN 12V 100MA SOT-23
详细参数
数值
产品分类 分离式半导体产品 >> 晶体管(BJT) - 单路
BSV52LT1G PDF
产品变化通告 Possible Adhesion Issue 11/July/2008
Wire Change 08/Jun/2009
标准包装 3,000
系列 -
晶体管类型 NPN
电流 - 集电极 (Ic)(最大) 100mA
电压 - 集电极发射极击穿(最大) 12V
Ib、Ic条件下的Vce饱和度(最大) 400mV @ 5mA,50mA
电流 - 集电极截止(最大) -
在某 Ic、Vce 时的最小直流电流增益 (hFE) 40 @ 10mA,1V
功率 - 最大 225mW
频率 - 转换 400MHz
安装类型 表面贴装
封装/外壳 TO-236-3,SC-59,SOT-23-3
供应商设备封装 SOT-23-3(TO-236)
包装 带卷 (TR)
其它名称 BSV52LT1G-ND
BSV52LT1GOSTR
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